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NTHD3100C
TYPICAL P ? CHANNEL PERFORMANCE CURVES
(T J = 25 ° C unless otherwise noted)
1500
1200
C iss
V GS = 0 V
T J = 25 ° C
5
4 ? V DS
QT
? V GS
10
8
900
3
6
600
V DS = 0 V
C rss
2
Q gs
Q gd
4
300
0
5
? V GS
0
? V DS
5
10
C oss
15
20
1
0
0
2
I D = ? 3.2 A
T J = 25 ° C
4 6
Q g , TOTAL GATE CHARGE (nC)
8
2
0
GATE ? TO ? SOURCE OR DRAIN ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 17. Capacitance Variation
Figure 18. Gate ? to ? Source and
Drain ? to ? Source Voltage vs. Total Charge
1000
100
V DS = ? 10 V
I D = ? 3.2 A
V GS = ? 4.5 V
t d(off)
t f
5
4
3
V GS = 0 V
T J = 25 ° C
t r
10
t d(on)
2
1
1
1
10
100
0
0.3
0.6
0.9
1.2
R G , GATE RESISTANCE (OHMS)
Figure 19. Resistive Switching Time Variation
vs. Gate Resistance
DEVICE ORDERING INFORMATION
? V SD , SOURCE ? TO ? DRAIN VOLTAGE (VOLTS)
Figure 20. Diode Forward Voltage vs. Current
Device
NTHD3100CT1
NTHD3100CT1G
NTHD3100CT3
NTHD3100CT3G
Package
ChipFET
ChipFET
(Pb ? Free)
ChipFET
ChipFET
(Pb ? Free)
Shipping ?
3000 / Tape & Reel
3000 / Tape & Reel
10000 / Tape & Reel
10000 / Tape & Reel
?For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
7
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